Characterization of porous silicate for ultra-low k dielectric application
نویسنده
چکیده
Thermal stability of a porous low-k film is a critical issue for application consideration in the back-end-of-line. In this study, thermal stability of the porous silicate has been investigated by changing the thermal processing temperatures. Experimental results have shown that the dielectric constant of the porous silicate still remains below 2.0 after thermal processing at 500 8C for 1 h. A series of material analysis techniques and electrical characteristics have been used to verify the physical and chemical characteristics of the porous silicate film. 2002 Elsevier Science B.V. All rights reserved.
منابع مشابه
Extended Theory of U* to Electrostatic Problem and Its Application to Pore Arrangements for Porous Low-k and High-k Dielectric Film
This paper discusses the effects of pore arrangements on the dielectric property of porous low-k and high-k dielectrics. Higher performance large scale integration (LSI) requires lower dielectric constant to decrease line-to-line capacitance. Recently, porous low-k dielectrics are introduced for low-k dielectrics because of its ultra lower dielectric constant. However, their poor mechanical str...
متن کاملApplication of mine waste for wastewater treatment: Efficient organic pollutant removal
In this research, a high porous silicate mining waste that was prepared from Syah Kamar Polymetal Porphyry mine in order to malachite green dye (MG) removal has been applied. The characterization of this natural mineral was determined using the XRD, XRF, SEM and FT-IR analysis. The MG adsorption onto high porous activated waste was studied based on the parameters of pH, temperature, adsorbent d...
متن کاملEffect of vacuum-ultraviolet irradiation on the dielectric constant of low-k organosilicate dielectrics
Articles you may be interested in Effects of plasma and vacuum-ultraviolet exposure on the mechanical properties of low-k porous organosilicate glass J. Bandgap measurements of low-k porous organosilicate dielectrics using vacuum ultraviolet irradiation Appl. Characteristics of ultra low-k nanoporous and fluorinated silica based films prepared by plasma enhanced chemical vapor deposition Plasma...
متن کاملCharacterization of nanoporous ultra low-k thin films templated by copolymers with different architectures
Triblock, diblock and random copolymers of poly(ethylene oxide) and poly(propylene oxide) are used as molecular templates in poly(methyl silsesquioxane) (MSQ) matrices to fabricate ultra low-k dielectric materials (kp2:0). Solidstate NMR shows that polymer architecture plays an important role in the polymer domain size and the polymer– matrix interface in the nanocomposites. Positronium annihil...
متن کاملElectrical characterization of thulium silicate interfacial layers for integration in high-k/metal gate CMOS technology
This work presents a characterization of the electrical properties of thulium silicate thin films, within the scope of a possible application as IL (interfacial layer) in scaled high-k/metal gate CMOS technology. Silicate formation is investigated over a wide temperature range (500–900 C) through integration in MOS capacitor structures and analysis of the resulting electrical properties. The re...
متن کامل